MRF8S9200NR3【PDF 1/13 页】MOSFET RF N-CH 58W OM780-2

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MRF8S9200NR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 920 to

960 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

1400 mA, Pout

= 58 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

920 MHz

19.9

37.7

6.1

--36.2

940 MHz

19.9

37.1

6.1

--36.6

960 MHz

19.5

36.8

6.0

--36.0

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW

Output Power (3 dB Input Overdrive from Rated Pout), Designed for

Enhanced Ruggedness

Typical Pout

@ 1 dB Compression Point

200 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

225°C Capable Plastic Package

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +70

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ

= 1400 mA

Case Temperature 80°C, 200 W CW, 28 Vdc, IDQ

= 1400 mA

RθJC

0.30

0.25

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S9200N

Rev. 1, 5/2010

Freescale Semiconductor

Technical Data

MRF8S9200NR3

920--960 MHz, 58 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

CASE 2021--03, STYLE 1

O M -- 7 8 0 -- 2

PLASTIC

Freescale Semiconductor, Inc., 2009--2010.

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